LN100LA-G

Mfr.Part #
LN100LA-G
Manufacturer
Microchip Technology
Package/Case
-
Datasheet
LN100LA-G
Description
MOSFET 2N-CH 1200V
Stock
35000

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Product Specifications

Manufacturer Microchip Technology
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
FET Feature Standard
FET Type 2 N-Channel (Cascoded)
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Mounting Type Surface Mount
Operating Temperature -25°C ~ 125°C (TJ)
Package / Case 6-VFLGA
Power - Max 350mW
Product Status Obsolete
Rds On (Max) @ Id, Vgs 3000Ohm @ 2mA, 2.8V
Supplier Device Package 6-LFGA (3x3)
Vgs(th) (Max) @ Id 1.6V @ 10µA

Related Documents

Datasheet LN100LA-G Datasheet (PDF)
LN100LA-G LN100LA-G

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Shipping Information

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Delivery Time

Estimated delivery time depends on your chosen shipping method after dispatch:

  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

IMPORTANT NOTICE

  1. You’ll receive an order confirmation email after placement—check your spam folder if it doesn’t appear in your inbox.
  2. Inventory and pricing are subject to fluctuations; our sales team will reconfirm details with you before dispatching your order.

Product Description

No detailed description for this product for the time being.

Manufacturer related products

Catalog related products

  • EPC
    GANFET 2NCH 120V 3.4A DIE
  • EPC
    GAN TRANS SYMMETRICAL HALF BRIDG
  • ROHM Semiconductor
    MOSFET 2N-CH 1200V 300A
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26

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