BSM300D12P2E001

Mfr.Part #
BSM300D12P2E001
Manufacturer
ROHM Semiconductor
Package/Case
-
Datasheet
BSM300D12P2E001
Description
MOSFET 2N-CH 1200V 300A
Stock
77

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Product Specifications

Manufacturer ROHM Semiconductor
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C 300A (Tc)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
FET Feature Silicon Carbide (SiC)
FET Type 2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 35000pF @ 10V
Mounting Type Chassis Mount
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case Module
Power - Max 1875W
Product Status Active
Rds On (Max) @ Id, Vgs -
Supplier Device Package Module
Vgs(th) (Max) @ Id 4V @ 68mA

Related Documents

Datasheet BSM300D12P2E001 Datasheet (PDF)
BSM300D12P2E001 BSM300D12P2E001

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Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

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Product Description

No detailed description for this product for the time being.

Manufacturer related products

Catalog related products

  • EPC
    GANFET 2NCH 120V 3.4A DIE
  • EPC
    GAN TRANS SYMMETRICAL HALF BRIDG
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET N/P-CH 20V 0.5A/0.33A ES6

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