VQ1001P-2

Mfr.Part #
VQ1001P-2
Manufacturer
Vishay
Package/Case
-
Datasheet
VQ1001P-2
Description
MOSFET 4N-CH 30V 0.83A 14DIP
Stock
35000

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Product Specifications

Manufacturer Vishay
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C 830mA
Drain to Source Voltage (Vdss) 30V
FET Feature Logic Level Gate
FET Type 4 N-Channel
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 15V
Mounting Type Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case -
Power - Max 2W
Product Status Obsolete
Rds On (Max) @ Id, Vgs 1.75Ohm @ 200mA, 5V
Supplier Device Package 14-DIP
Vgs(th) (Max) @ Id 2.5V @ 1mA

Related Documents

Datasheet VQ1001P-2 Datasheet (PDF)
VQ1001P-2 VQ1001P-2

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Shipping Information

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Delivery Time

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  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

IMPORTANT NOTICE

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  2. Inventory and pricing are subject to fluctuations; our sales team will reconfirm details with you before dispatching your order.

Product Description

No detailed description for this product for the time being.

Manufacturer related products

Catalog related products

  • EPC
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  • ROHM Semiconductor
    MOSFET 2N-CH 1200V 300A
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26

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