BSD840N L6327

Mfr.Part #
BSD840N L6327
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
BSD840N L6327
Description
MOSFET 2N-CH 20V 0.88A SOT363
Stock
35000

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Product Specifications

Manufacturer Infineon Technologies
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C 880mA
Drain to Source Voltage (Vdss) 20V
FET Feature Logic Level Gate
FET Type 2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs 0.26nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds 78pF @ 10V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case 6-VSSOP, SC-88, SOT-363
Power - Max 500mW
Product Status Obsolete
Rds On (Max) @ Id, Vgs 400mOhm @ 880mA, 2.5V
Supplier Device Package PG-SOT363-PO
Vgs(th) (Max) @ Id 750mV @ 1.6µA

Related Documents

Datasheet BSD840N L6327 Datasheet (PDF)
BSD840N L6327 BSD840N L6327

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  • FedEx International: 5-7 business days
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Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

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Product Description

No detailed description for this product for the time being.

Manufacturer related products

Catalog related products

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  • ROHM Semiconductor
    MOSFET 2N-CH 1200V 300A
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26

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