F415MR12W2M1B76BOMA1

Mfr.Part #
F415MR12W2M1B76BOMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
F415MR12W2M1B76BOMA1
Description
LOW POWER EASY AG-EASY2B-2
Stock
6

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Product Specifications

Manufacturer Infineon Technologies
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C 75A (Tj)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
FET Feature Silicon Carbide (SiC)
FET Type 4 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs 186nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 5520pF @ 800V
Mounting Type Chassis Mount
Operating Temperature -40°C ~ 150°C (TJ)
Package / Case Module
Power - Max -
Product Status Obsolete
Rds On (Max) @ Id, Vgs 15mOhm @ 75A, 15V
Supplier Device Package AG-EASY1B-2
Vgs(th) (Max) @ Id 5.55V @ 30mA

Related Documents

Datasheet F415MR12W2M1B76BOMA1 Datasheet (PDF)

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Shipping Information

Shipping Cost

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Basic freight (for packages ≤0.5kg or equivalent volume) varies by time zone and destination country.

Shipping Method

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Delivery Time

Estimated delivery time depends on your chosen shipping method after dispatch:

  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

IMPORTANT NOTICE

  1. You’ll receive an order confirmation email after placement—check your spam folder if it doesn’t appear in your inbox.
  2. Inventory and pricing are subject to fluctuations; our sales team will reconfirm details with you before dispatching your order.

Product Description

No detailed description for this product for the time being.

Manufacturer related products

Catalog related products

  • EPC
    GANFET 2NCH 120V 3.4A DIE
  • EPC
    GAN TRANS SYMMETRICAL HALF BRIDG
  • ROHM Semiconductor
    MOSFET 2N-CH 1200V 300A
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26

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