QH8M22TCR

Mfr.Part #
QH8M22TCR
Manufacturer
ROHM Semiconductor
Package/Case
-
Datasheet
QH8M22TCR
Description
QH8M22 IS THE HIGH RELIABILITY T
Stock
26890

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Product Specifications

Manufacturer ROHM Semiconductor
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 2A (Ta)
Drain to Source Voltage (Vdss) 40V
FET Feature Standard
FET Type N and P-Channel
Gate Charge (Qg) (Max) @ Vgs 2.6nC @ 10V, 9.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 193pF @ 20V, 450pF @ 20V
Mounting Type Surface Mount
Operating Temperature 150°C (TJ)
Package / Case 8-SMD, Flat Lead
Power - Max 1.1W (Ta)
Product Status Active
Rds On (Max) @ Id, Vgs 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
Supplier Device Package TSMT8
Vgs(th) (Max) @ Id 2.5V @ 10µA, 3V @ 1mA

Related Documents

Datasheet QH8M22TCR Datasheet (PDF)
QH8M22TCR QH8M22TCR

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Shipping Information

Shipping Cost

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Delivery Time

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  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

IMPORTANT NOTICE

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  2. Inventory and pricing are subject to fluctuations; our sales team will reconfirm details with you before dispatching your order.

Product Description

No detailed description for this product for the time being.

Manufacturer related products

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  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26

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