F4100R12KS4BOSA1

Mfr.Part #
F4100R12KS4BOSA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
F4100R12KS4BOSA1
Description
IGBT MOD 1200V 130A 660W
Stock
35000

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Product Specifications

Manufacturer Infineon Technologies
Product Category Discrete Semiconductor Products > Transistors - IGBTs - Modules
Configuration Three Phase Inverter
Current - Collector (Ic) (Max) 130 A
Current - Collector Cutoff (Max) 5 mA
IGBT Type -
Input Standard
Input Capacitance (Cies) @ Vce 6.8 nF @ 25 V
Mounting Type Chassis Mount
NTC Thermistor Yes
Operating Temperature -40°C ~ 125°C
Package / Case Module
Power - Max 660 W
Product Status Active
Supplier Device Package Module
Vce(on) (Max) @ Vge, Ic 3.75V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max) 1200 V

Related Documents

Datasheet F4100R12KS4BOSA1 Datasheet (PDF)
F4100R12KS4BOSA1 F4100R12KS4BOSA1

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Shipping Information

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Delivery Time

Estimated delivery time depends on your chosen shipping method after dispatch:

  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

IMPORTANT NOTICE

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  2. Inventory and pricing are subject to fluctuations; our sales team will reconfirm details with you before dispatching your order.

Product Description

No detailed description for this product for the time being.

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