IGT60R190D1SATMA1

Mfr.Part #
IGT60R190D1SATMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
IGT60R190D1SATMA1
Description
GANFET N-CH 600V 12.5A 8HSOF
Stock
35000

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Product Specifications

Manufacturer Infineon Technologies
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 12.5A (Tc)
Drain to Source Voltage (Vdss) 600 V
Drive Voltage (Max Rds On, Min Rds On) -
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 157 pF @ 400 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case 8-PowerSFN
Power Dissipation (Max) 55.5W (Tc)
Product Status Obsolete
Rds On (Max) @ Id, Vgs -
Supplier Device Package PG-HSOF-8-3
Technology GaNFET (Gallium Nitride)
Vgs (Max) -10V
Vgs(th) (Max) @ Id 1.6V @ 960µA

Related Documents

Datasheet IGT60R190D1SATMA1 Datasheet (PDF)
IGT60R190D1SATMA1 IGT60R190D1SATMA1

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Shipping Information

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Delivery Time

Estimated delivery time depends on your chosen shipping method after dispatch:

  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

IMPORTANT NOTICE

  1. You’ll receive an order confirmation email after placement—check your spam folder if it doesn’t appear in your inbox.
  2. Inventory and pricing are subject to fluctuations; our sales team will reconfirm details with you before dispatching your order.

Product Description

No detailed description for this product for the time being.

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