R6035KNZ1C9

Mfr.Part #
R6035KNZ1C9
Manufacturer
ROHM Semiconductor
Package/Case
-
Datasheet
R6035KNZ1C9
Description
MOSFET N-CHANNEL 600V 35A TO247
Stock
35000

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Product Specifications

Manufacturer ROHM Semiconductor
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drain to Source Voltage (Vdss) 600 V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V
Mounting Type Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-247-3
Power Dissipation (Max) 379W (Tc)
Product Status Obsolete
Rds On (Max) @ Id, Vgs 102mOhm @ 18.1A, 10V
Supplier Device Package TO-247
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 5V @ 1mA

Related Documents

Datasheet R6035KNZ1C9 Datasheet (PDF)
R6035KNZ1C9 R6035KNZ1C9

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Shipping Information

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Delivery Time

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  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

IMPORTANT NOTICE

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  2. Inventory and pricing are subject to fluctuations; our sales team will reconfirm details with you before dispatching your order.

Product Description

No detailed description for this product for the time being.

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