GT088N06T

Mfr.Part #
GT088N06T
Manufacturer
Goford Semiconductor
Package/Case
-
Datasheet
GT088N06T
Description
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
Stock
50

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Product Specifications

Manufacturer Goford Semiconductor
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drain to Source Voltage (Vdss) 60 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 30 V
Mounting Type Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-220-3
Power Dissipation (Max) 75W (Tc)
Product Status Active
Rds On (Max) @ Id, Vgs 9mOhm @ 14A, 10V
Supplier Device Package TO-220
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 2.4V @ 250µA

Related Documents

Datasheet GT088N06T Datasheet (PDF)
GT088N06T GT088N06T

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Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

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Product Description

No detailed description for this product for the time being.

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