G20P06K

Mfr.Part #
G20P06K
Manufacturer
Goford Semiconductor
Package/Case
-
Datasheet
G20P06K
Description
P-60V, -20A,RD<45M@-10V,VTH-2V~-
Stock
35000

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Product Specifications

Manufacturer Goford Semiconductor
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drain to Source Voltage (Vdss) 60 V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 3430 pF @ 30 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) 90W (Tc)
Product Status Active
Rds On (Max) @ Id, Vgs 45mOhm @ 12A, 10V
Supplier Device Package TO-252
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 3.5V @ 250µA

Related Documents

Datasheet G20P06K Datasheet (PDF)
G20P06K G20P06K

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Common Logistics Timelines
Region Country Logistic Time (Day)
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America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

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Product Description

No detailed description for this product for the time being.

Manufacturer related products

  • Goford Semiconductor
    P+P -30V,RD(MAX)<60M@-10V,RD(MAX
  • Goford Semiconductor
    N60V, 5A,RD<35M@10V,VTH1V~2.5V,
  • Goford Semiconductor
    P-30V, -9A,RD<18M@-10V,VTH-1V~-2
  • Goford Semiconductor
    N30V,RD(MAX)<12M@10V,RD(MAX)<13M
  • Goford Semiconductor
    NP60V, 5A/-3.1A,RD<36M/80M@10V/-

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