R8010ANX

Mfr.Part #
R8010ANX
Manufacturer
ROHM Semiconductor
Package/Case
-
Datasheet
R8010ANX
Description
MOSFET N-CH 800V 10A TO220FM
Stock
35000

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Product Specifications

Manufacturer ROHM Semiconductor
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drain to Source Voltage (Vdss) 800 V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 25 V
Mounting Type Through Hole
Operating Temperature 150°C (TJ)
Package / Case TO-220-3 Full Pack
Power Dissipation (Max) 40W (Tc)
Product Status Active
Rds On (Max) @ Id, Vgs 560mOhm @ 5A, 10V
Supplier Device Package TO-220FM
Technology MOSFET (Metal Oxide)
Vgs (Max) ±30V
Vgs(th) (Max) @ Id 5V @ 1mA

Related Documents

Datasheet R8010ANX Datasheet (PDF)
R8010ANX R8010ANX

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Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

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Product Description

No detailed description for this product for the time being.

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