RQ3E100MNTB1

Mfr.Part #
RQ3E100MNTB1
Manufacturer
ROHM Semiconductor
Package/Case
-
Datasheet
RQ3E100MNTB1
Description
MOSFET N-CH 30V 10A HSMT8
Stock
5261

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Product Specifications

Manufacturer ROHM Semiconductor
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drain to Source Voltage (Vdss) 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 15 V
Mounting Type Surface Mount
Operating Temperature 150°C (TJ)
Package / Case 8-PowerVDFN
Power Dissipation (Max) 2W (Ta)
Product Status Active
Rds On (Max) @ Id, Vgs 12.3mOhm @ 10A, 10V
Supplier Device Package 8-HSMT (3.2x3)
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 2.5V @ 1mA

Related Documents

Datasheet RQ3E100MNTB1 Datasheet (PDF)
RQ3E100MNTB1 RQ3E100MNTB1

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Shipping Information

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Delivery Time

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  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

IMPORTANT NOTICE

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  2. Inventory and pricing are subject to fluctuations; our sales team will reconfirm details with you before dispatching your order.

Product Description

No detailed description for this product for the time being.

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