IRF710

Mfr.Part #
IRF710
Manufacturer
Harris Corporation
Package/Case
-
Datasheet
IRF710
Description
PFET, 2A I(D), 400V, 3.6OHM, 1-E
Stock
35000

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Product Specifications

Manufacturer Harris Corporation
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drain to Source Voltage (Vdss) 400 V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 135 pF @ 25 V
Mounting Type Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-220-3
Power Dissipation (Max) 36W (Tc)
Product Status Active
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.1A, 10V
Supplier Device Package TO-220AB
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 4V @ 250µA

Related Documents

Datasheet IRF710 Datasheet (PDF)
IRF710 IRF710

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Shipping Information

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Delivery Time

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  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

IMPORTANT NOTICE

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  2. Inventory and pricing are subject to fluctuations; our sales team will reconfirm details with you before dispatching your order.

Product Description

No detailed description for this product for the time being.

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