SI8401DB-T1-E1

Mfr.Part #
SI8401DB-T1-E1
Manufacturer
Vishay
Package/Case
-
Datasheet
SI8401DB-T1-E1
Description
MOSFET P-CH 20V 3.6A 4MICROFOOT
Stock
35000

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Product Specifications

Manufacturer Vishay
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)
Drain to Source Voltage (Vdss) 20 V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds -
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case 4-XFBGA, CSPBGA
Power Dissipation (Max) 1.47W (Ta)
Product Status Active
Rds On (Max) @ Id, Vgs 65mOhm @ 1A, 4.5V
Supplier Device Package 4-Microfoot
Technology MOSFET (Metal Oxide)
Vgs (Max) ±12V
Vgs(th) (Max) @ Id 1.4V @ 250µA

Related Documents

Datasheet SI8401DB-T1-E1 Datasheet (PDF)
SI8401DB-T1-E1 SI8401DB-T1-E1

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Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

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Product Description

No detailed description for this product for the time being.

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