RQ3P300BHTB1

Mfr.Part #
RQ3P300BHTB1
Manufacturer
ROHM Semiconductor
Package/Case
-
Datasheet
RQ3P300BHTB1
Description
NCH 100V 39A, HSMT8, POWER MOSFE
Stock
35000

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Product Specifications

Manufacturer ROHM Semiconductor
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 39A (Ta)
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 50 V
Mounting Type Surface Mount
Operating Temperature 150°C (TJ)
Package / Case 8-PowerVDFN
Power Dissipation (Max) 2W (Ta)
Product Status Active
Rds On (Max) @ Id, Vgs 15.5mOhm @ 10A, 10V
Supplier Device Package 8-HSMT (3.2x3)
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 4V @ 1mA

Related Documents

Datasheet RQ3P300BHTB1 Datasheet (PDF)
RQ3P300BHTB1 RQ3P300BHTB1

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Delivery Time

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  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

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Product Description

No detailed description for this product for the time being.

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Part Manufacturer Stock Description
RQ3P300BETB1 ROHM Semiconductor 35,000 MOSFET N-CH 100V 10A/36A 8HSMT