IV1Q12050T3

Mfr.Part #
IV1Q12050T3
Manufacturer
Inventchip Technology
Package/Case
-
Datasheet
IV1Q12050T3
Description
SIC MOSFET, 1200V 50MOHM, TO-247
Stock
54

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Product Specifications

Manufacturer Inventchip Technology
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Drain to Source Voltage (Vdss) 1200 V
Drive Voltage (Max Rds On, Min Rds On) 20V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds 2770 pF @ 800 V
Mounting Type Through Hole
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case TO-247-3
Power Dissipation (Max) 327W (Tc)
Product Status Active
Rds On (Max) @ Id, Vgs 65mOhm @ 20A, 20V
Supplier Device Package TO-247-3
Technology SiCFET (Silicon Carbide)
Vgs (Max) +20V, -5V
Vgs(th) (Max) @ Id 3.2V @ 6mA

Related Documents

Datasheet IV1Q12050T3 Datasheet (PDF)
IV1Q12050T3 IV1Q12050T3

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Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

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Product Description

No detailed description for this product for the time being.

Manufacturer related products

  • Inventchip Technology
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  • Inventchip Technology
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  • Inventchip Technology
    SIC DIODE, 1200V 40A, TO-247-2
  • Inventchip Technology
    SIC DIODE, 650V 6A, TO-220-2
  • Inventchip Technology
    SIC DIODE, 650V 6A, DPAK

Catalog related products

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Part Manufacturer Stock Description
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