SPB20N60C3ATMA1

Mfr.Part #
SPB20N60C3ATMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
SPB20N60C3ATMA1
Description
MOSFET N-CH 650V 20.7A TO263-3
Stock
269

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Product Specifications

Manufacturer Infineon Technologies
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 20.7A (Tc)
Drain to Source Voltage (Vdss) 650 V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) 208W (Tc)
Product Status Active
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V
Supplier Device Package PG-TO263-3-2
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 3.9V @ 1mA

Related Documents

Datasheet SPB20N60C3ATMA1 Datasheet (PDF)
SPB20N60C3ATMA1 SPB20N60C3ATMA1

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Shipping Information

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Delivery Time

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  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

IMPORTANT NOTICE

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  2. Inventory and pricing are subject to fluctuations; our sales team will reconfirm details with you before dispatching your order.

Product Description

No detailed description for this product for the time being.

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