IQE013N04LM6CGATMA1

Mfr.Part #
IQE013N04LM6CGATMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
IQE013N04LM6CGATMA1
Description
40V N-CH FET SOURCE-DOWN CG 3X3
Stock
4816

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Product Specifications

Manufacturer Infineon Technologies
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 205A (Tc)
Drain to Source Voltage (Vdss) 40 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 20 V
Mounting Type Surface Mount, Wettable Flank
Operating Temperature -55°C ~ 175°C (TJ)
Package / Case 8-PowerTDFN
Power Dissipation (Max) 2.5W (Ta), 107W (Tc)
Product Status Active
Rds On (Max) @ Id, Vgs 1.35mOhm @ 20A, 10V
Supplier Device Package PG-TTFN-9-1
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 2V @ 51µA

Related Documents

Datasheet IQE013N04LM6CGATMA1 Datasheet (PDF)
IQE013N04LM6CGATMA1 IQE013N04LM6CGATMA1

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Shipping Information

Shipping Cost

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Shipping Method

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Delivery Time

Estimated delivery time depends on your chosen shipping method after dispatch:

  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

IMPORTANT NOTICE

  1. You’ll receive an order confirmation email after placement—check your spam folder if it doesn’t appear in your inbox.
  2. Inventory and pricing are subject to fluctuations; our sales team will reconfirm details with you before dispatching your order.

Product Description

No detailed description for this product for the time being.

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