GT095N10S
- Mfr.Part #
- GT095N10S
- Manufacturer
- Goford Semiconductor
- Package/Case
- -
- Datasheet
- GT095N10S
- Description
- N100V, 21A,RD<9.5M@10V,VTH1.2V~2
- Stock
- 4000
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Product Specifications
| Manufacturer | Goford Semiconductor |
|---|---|
| Product Category | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2131 pF @ 50 V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | - |
| Power Dissipation (Max) | 8W (Tc) |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 20A, 10V |
| Supplier Device Package | 8-SOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
Related Documents
| Datasheet | GT095N10S Datasheet (PDF) |
|---|---|
| GT095N10S | GT095N10S |
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Shipping Information
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- DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
| Region | Country | Logistic Time (Day) |
|---|---|---|
| America | United States | 5 |
| America | Mexico | 6 |
| Europe | Germany | 5 |
| Europe | France | 4 |
| Oceania | Australia | 6 |
| Asia | South Korea | 3 |
IMPORTANT NOTICE
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Product Description
No detailed description for this product for the time being.Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| GT090N06D52 | Goford Semiconductor | 3,494 | N60V,RD(MAX)<9M@10V,RD(MAX)<13M@ |
| GT090N06K | Goford Semiconductor | 35,000 | MOSFET, N-CH, 60V,45A,TO-252 |
| GT095N10D5 | Goford Semiconductor | 14,908 | N100V,RD(MAX)<11M@10V,RD(MAX)<15 |
| GT095N10K | Goford Semiconductor | 4,841 | N100V, RD(MAX)<10.5M@10V,RD(MAX) |
