G3035L

Mfr.Part #
G3035L
Manufacturer
Goford Semiconductor
Package/Case
-
Datasheet
G3035L
Description
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Stock
3077

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Product Specifications

Manufacturer Goford Semiconductor
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)
Drain to Source Voltage (Vdss) 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 15 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) 1.4W (Ta)
Product Status Active
Rds On (Max) @ Id, Vgs 59mOhm @ 2.1A, 10V
Supplier Device Package SOT-23-3
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 2V @ 250µA

Related Documents

Datasheet G3035L Datasheet (PDF)
G3035L G3035L

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Common Logistics Timelines
Region Country Logistic Time (Day)
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America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

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Product Description

No detailed description for this product for the time being.

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  • Goford Semiconductor
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G3035 Goford Semiconductor 47 P30V,RD(MAX)<59M@-10V,RD(MAX)<75