G1002L

Mfr.Part #
G1002L
Manufacturer
Goford Semiconductor
Package/Case
-
Datasheet
G1002L
Description
N100V,RD(MAX)<250M@10V,VTH1.2V~2
Stock
3000

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Product Specifications

Manufacturer Goford Semiconductor
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 2A
Drain to Source Voltage (Vdss) 100 V
Drive Voltage (Max Rds On, Min Rds On) -
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 413 pF @ 50 V
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) 1.3W
Product Status Active
Rds On (Max) @ Id, Vgs 250mOhm @ 2A, 10V
Supplier Device Package SOT-23-3L
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 2V @ 250µA

Related Documents

Datasheet G1002L Datasheet (PDF)
G1002L G1002L

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Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

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Product Description

No detailed description for this product for the time being.

Manufacturer related products

  • Goford Semiconductor
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  • Goford Semiconductor
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  • Goford Semiconductor
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  • Goford Semiconductor
    N30V,RD(MAX)<12M@10V,RD(MAX)<13M
  • Goford Semiconductor
    NP60V, 5A/-3.1A,RD<36M/80M@10V/-

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