TK14G65W,RQ

Mfr.Part #
TK14G65W,RQ
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
TK14G65W,RQ
Description
MOSFET N-CH 650V 13.7A D2PAK
Stock
2000

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Product Specifications

Manufacturer Toshiba Electronic Devices and Storage Corporation
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 13.7A (Ta)
Drain to Source Voltage (Vdss) 650 V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 300 V
Mounting Type Surface Mount
Operating Temperature 150°C (TJ)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) 130W (Tc)
Product Status Active
Rds On (Max) @ Id, Vgs 250mOhm @ 6.9A, 10V
Supplier Device Package D2PAK
Technology MOSFET (Metal Oxide)
Vgs (Max) ±30V
Vgs(th) (Max) @ Id 3.5V @ 690µA

Related Documents

Datasheet TK14G65W,RQ Datasheet (PDF)
TK14G65W,RQ TK14G65W,RQ

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Shipping Information

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Delivery Time

Estimated delivery time depends on your chosen shipping method after dispatch:

  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

IMPORTANT NOTICE

  1. You’ll receive an order confirmation email after placement—check your spam folder if it doesn’t appear in your inbox.
  2. Inventory and pricing are subject to fluctuations; our sales team will reconfirm details with you before dispatching your order.

Product Description

No detailed description for this product for the time being.

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