TW015N65C,S1F

Mfr.Part #
TW015N65C,S1F
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
TW015N65C,S1F
Description
G3 650V SIC-MOSFET TO-247 15MOH
Stock
161

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Product Specifications

Manufacturer Toshiba Electronic Devices and Storage Corporation
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drain to Source Voltage (Vdss) 650 V
Drive Voltage (Max Rds On, Min Rds On) 18V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 128 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 4850 pF @ 400 V
Mounting Type Through Hole
Operating Temperature 175°C
Package / Case TO-247-3
Power Dissipation (Max) 342W (Tc)
Product Status Active
Rds On (Max) @ Id, Vgs 21mOhm @ 50A, 18V
Supplier Device Package TO-247
Technology SiC (Silicon Carbide Junction Transistor)
Vgs (Max) +25V, -10V
Vgs(th) (Max) @ Id 5V @ 11.7mA

Related Documents

Datasheet TW015N65C,S1F Datasheet (PDF)
TW015N65C,S1F TW015N65C,S1F

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Shipping Information

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Delivery Time

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  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

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Product Description

No detailed description for this product for the time being.

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