TK110E65Z,S1X

Mfr.Part #
TK110E65Z,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
TK110E65Z,S1X
Description
650V DTMOS VI TO-220 110MOHM
Stock
200

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Product Specifications

Manufacturer Toshiba Electronic Devices and Storage Corporation
Product Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C 24A (Ta)
Drain to Source Voltage (Vdss) 650 V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 300 V
Mounting Type Through Hole
Operating Temperature 150°C
Package / Case TO-220-3
Power Dissipation (Max) 190W (Tc)
Product Status Active
Rds On (Max) @ Id, Vgs 110mOhm @ 12A, 10V
Supplier Device Package TO-220
Technology MOSFET (Metal Oxide)
Vgs (Max) ±30V
Vgs(th) (Max) @ Id 4V @ 1.02mA

Related Documents

Datasheet TK110E65Z,S1X Datasheet (PDF)
TK110E65Z,S1X TK110E65Z,S1X

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Shipping Information

Shipping Cost

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Delivery Time

Estimated delivery time depends on your chosen shipping method after dispatch:

  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

IMPORTANT NOTICE

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  2. Inventory and pricing are subject to fluctuations; our sales team will reconfirm details with you before dispatching your order.

Product Description

No detailed description for this product for the time being.

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