EMF17T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector (Ic) (Max) :

100mA, 150mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 20mA, 5V / 180 @ 1mA, 6V

Frequency - Transition :

250MHz, 140MHz

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Power - Max :

150mW

Product Status :

Active

Resistor - Base (R1) :

2.2kOhms

Resistor - Emitter Base (R2) :

2.2kOhms

Supplier Device Package :

EMT6

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50V