IDC51D120T6MX1SA3

Mfr.Part #
IDC51D120T6MX1SA3
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
IDC51D120T6MX1SA3
Description
DIODE GEN PURP 1.2KV 100A WAFER
Stock
35000

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Product Specifications

Manufacturer Infineon Technologies
Product Category Discrete Semiconductor Products > Diodes - Rectifiers - Single
Capacitance @ Vr, F -
Current - Average Rectified (Io) 100A
Current - Reverse Leakage @ Vr 18 µA @ 1200 V
Diode Type Standard
Mounting Type Surface Mount
Operating Temperature - Junction -40°C ~ 175°C
Package / Case Die
Product Status Active
Reverse Recovery Time (trr) -
Speed Standard Recovery >500ns, > 200mA (Io)
Supplier Device Package Sawn on foil
Voltage - DC Reverse (Vr) (Max) 1200 V
Voltage - Forward (Vf) (Max) @ If 2.05 V @ 100 A

Related Documents

Datasheet IDC51D120T6MX1SA3 Datasheet (PDF)
IDC51D120T6MX1SA3 IDC51D120T6MX1SA3

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Shipping Information

Shipping Cost

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Delivery Time

Estimated delivery time depends on your chosen shipping method after dispatch:

  • FedEx International: 5-7 business days
  • DHL Express: 3-5 business days (major regions)
Common Logistics Timelines
Region Country Logistic Time (Day)
America United States 5
America Mexico 6
Europe Germany 5
Europe France 4
Oceania Australia 6
Asia South Korea 3

IMPORTANT NOTICE

  1. You’ll receive an order confirmation email after placement—check your spam folder if it doesn’t appear in your inbox.
  2. Inventory and pricing are subject to fluctuations; our sales team will reconfirm details with you before dispatching your order.

Product Description

No detailed description for this product for the time being.

Manufacturer related products

Catalog related products

  • ROHM Semiconductor
    DIODE SCHOTTKY 650V 10A TO263AB
  • onsemi
    DIODE GEN PURP 100V 200MA DO35
  • SMC Diode Solutions
    DIODE GEN PURP 400V 1A SMA
  • SMC Diode Solutions
    DIODE GEN PURP 1KV 1A SMA
  • Nexperia
    DIODE GP 100V 215MA TO236AB

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