FDT55AN06LA0

制造商 :

onsemi

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

12.1A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

10 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1130 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power Dissipation (Max) :

8.9W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

46mOhm @ 11A, 10V

Supplier Device Package :

SOT-223-4

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA